H5AN8G8NCJR-VKC vs H5AN8G8NCJR-VKI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NCJR-VKC sa pamamagitan ng SK hynix at H5AN8G8NCJR-VKI sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NCJR-VKC | H5AN8G8NCJR-VKI |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM (volatile) | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit | 8 Gb |
| Memory Organization | 1G x 8 | 1G x8 |
| Rate ng Data | 2666 Mbps/pin | 2666 Mbps |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) | — |
| Operating Current (typ) | 30 mA | — |
| Standby Current (typ) | 3 mA | — |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: Operating Temperature] |
| Packhaging | FBGA-78 (78-ball fine-pitch BGA) | FBGA-78 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | Parallel (DDR4) | Parallel |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS Status] |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh period] | — |
| Volte ng Pagbibigay | — | 1.2 V |
| Memory Format | — | DRAM |
| Volatile | — | Yes |
| Grade | — | Industrial (I suffix) |
| Technology | — | CMOS |
| Product Family | — | H5AN8G8NCJR-xxC/xI DDR4 SDRAM |
| Packaging | — | Tray |
| Product Status | — | Active |