H5AN8G8NCJR-VKI vs H5AN8G8NCJR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-VKI disebabkan oleh SK hynix dan H5AN8G8NCJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NCJR-VKI | H5AN8G8NCJR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | 8 Gb (1 GB) |
| Memory Organization | 1G x8 | — |
| Kadar Data | 2666 Mbps | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Tegangan Pemberi Arus | 1.2 V | — |
| Antaramuka | Parallel | — |
| Memory Format | DRAM | — |
| Volatile | Yes | — |
| Kemasan | FBGA-78 | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Grade | Industrial (I suffix) | — |
| Suhu Operasi | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Technology | CMOS | — |
| Product Family | H5AN8G8NCJR-xxC/xI DDR4 SDRAM | — |
| Packaging | Tray | — |
| Product Status | Active | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | Lead-Free & Halogen-Free |
| Organisasi | — | 1G x 8 (x8) |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Burst Length | — | BL8 |
| Ciri-ciri | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Refresh | — | Auto-refresh and self-refresh |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |