H5AN8G8NCJR-VKI vs H5AN8G8NCJR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-VKI disebabkan oleh SK hynix dan H5AN8G8NCJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NCJR-VKI | H5AN8G8NCJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 1G x8 | — |
| Kadar Data | 2666 Mbps | up to 2666 Mbps |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V (VDD) |
| Antaramuka | Parallel | DDR4 (JEDEC standard) |
| Memory Format | DRAM | — |
| Volatile | Yes | — |
| Kemasan | FBGA-78 | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Grade | Industrial (I suffix) | — |
| Suhu Operasi | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Technology | CMOS | — |
| Product Family | H5AN8G8NCJR-xxC/xI DDR4 SDRAM | — |
| Packaging | Tray | — |
| Product Status | Active | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | Compliant |
| Density | — | 8 Gb (1 GB) |
| Organisasi | — | x8 |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| Latensi CAS | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Boson Bebas | — | Yes |