H5ANAG6NAMR-UHC vs H5ANAG6NCR-VKC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NAMR-UHC disebabkan oleh SK hynix dan H5ANAG6NCR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr H5ANAG6NAMR-UHC H5ANAG6NCR-VKC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Memory Density 16 Gbit (2 GB) 16 Gbit
Organisasi 1G x 16 2G x 8
Speed Grade / Data Rate DDR4-2400 (UHC bin, PC4-19200) —
Supply Voltage (VDD) 1.2 V —
Architecture CMOS DDR4 with bank groups —
Power Class Normal Power —
Kemasan FBGA-96 (PBGA96) 96-ball FBGA
Jenis Pemasangan Surface Mount (BGA solder ball) Surface Mount
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature suffix range confirmation]
Refresh Self-refresh and auto-refresh (DDR4 standard 64 ms) —
Latensi CAS [DATA_NEEDED: CL for UHC bin] —
Jenis Antaramuka Parallel, synchronous, double data rate —
Available Speed Bins (family) PB / RD / TF / UH / VK —
Application Class Main memory, embedded, industrial —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance statement]
Status Lingkungan Hidup Active production —
Antaramuka — DDR4 (Double Data Rate 4)
Supply Voltage VDD — 1.2 V
Supply Voltage VDDQ — 1.2 V
Kadar Data — [DATA_NEEDED: verified speed grade in Mbps]
Banks — 16 banks (4 bank groups x 4)
Burst Length — BL8
Refresh Mode — 1x / 2x / 4X per JEDEC DDR4
Technology — CMOS
Application — Main memory (PC / server / embedded)

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