H5ANAG6NBJR-PBC vs H5AN4G6NBJR-UHC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NBJR-PBC disebabkan oleh SK hynix dan H5AN4G6NBJR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5ANAG6NBJR-PBC | H5AN4G6NBJR-UHC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb (2 GB) | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Generation Max Data Rate | 3200 MT/s (family max) | — |
| Kemasan | FBGA-96 | FBGA-96 (PBGA-96) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | Auto self-refresh |
| Data Mask Function | Yes | Yes (DM) |
| Asynchronous Reset | Yes | Yes (RESET_n) |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| CRC Function | Yes | Yes (command/address CRC) |
| Suhu Operasi | [DATA_NEEDED: Operating Temperature] | -40C to +95C |
| Speed Bin (PBC) | [DATA_NEEDED: Speed grade MT/s] | — |
| Organisasi | [DATA_NEEDED: Organization x16/x8] | 256M x 16 |
| Status RoHS | [DATA_NEEDED: RoHS Status] | Compliant |
| Saiz Ingatan | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Technology | — | CMOS |
| On-Die Termination | — | Dynamic ODT |