H5ANAG6NBJR-VKC vs H5ANAG6NBJR-UHC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NBJR-VKC disebabkan oleh SK hynix dan H5ANAG6NBJR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5ANAG6NBJR-VKC | H5ANAG6NBJR-UHC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | SK Hynix | — |
| Part Number | H5ANAG6NBJR-VKC | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 16Gb (2GB) | — |
| Organisasi | [DATA_NEEDED: x16 organization per datasheet] | 256M x 16 |
| Kadar Data | 2666 Mbps (per family reference, VKC speed code) | — |
| Tegangan Pemberi Arus | 1.2 V (DDR4 standard) | — |
| Antaramuka | DDR4, SSTL-12 | DDR4 (CMOS) |
| Kemasan | FBGA-96 (PBGA96) | PBGA96 / FBGA-96 (TFBGA) |
| Jenis Pemasangan | Surface Mount | — |
| Suhu Operasi | -40C to +95C (family grade reference) | -40C to +95C |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Asynchronous Reset | Yes | Supported |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | Supported |
| Write Leveling | Yes | Supported |
| CRC Function | Yes | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | RoHS Compliant |
| Density | — | 4 Gb |
| Package Dimensions | — | 13 mm length (per JESD-30 R-PBGA-B96) |
| Access Mode | — | Multi Bank, Page Burst |
| Refresh | — | Auto / Self Refresh |
| Data Mask | — | Supported (DM function) |
| On-Chip Termination | — | Dynamic ODT |
| CRC | — | Supported |
| Supply Voltage Class | — | DDR4 (1.2 V class) |
| REACH Compliance | — | Compliant |
| ECCN | — | EAR99 |
| HTS Code | — | 8542.32.00.36 |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Max Data Rate | — | [DATA_NEEDED: Max Data Rate] |