H5ANAG6NCR-PBC vs H5ANAG6NBJR-RDC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NCR-PBC disebabkan oleh SK hynix dan H5ANAG6NBJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5ANAG6NBJR-RDC H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG6NCR-PBC H5ANAG6NBJR-RDC
Merek SK hynix SK hynix
Kategori Memory ICs DRAM
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 16Gb (2GB) 16 Gb
Organisasi x16 (1G x 16) —
Tegangan Pemberi Arus 1.14 V to 1.26 V (nominal 1.2 V) —
Transfer Rate 3200 Mbps (family, per XNCR datasheet; PBC speed grade [DATA_NEEDED: exact speed grade Mbps]) —
Kemasan FBGA-96 FBGA (Ball Grid Array), surface mount
Number of Terminals 96 balls —
Suhu Operasi 0C to 85C [DATA_NEEDED: Operating Temperature Range]
Jenis Pemasangan Surface Mount Surface Mount
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Yes —
Dynamic ODT Yes —
ZQ Calibration Yes —
CRC Function Yes —
Write Leveling Yes —
Status RoHS Compliant [DATA_NEEDED: RoHS Status]
Maximum Standby Current [DATA_NEEDED: maximum standby current for PBC speed grade] —
Latensi CAS [DATA_NEEDED: CAS latency for PBC speed grade] —
Memory Organization — 16Gb x16
Kadar Data — 2666 Mbps (speed grade -RDC)
Supply Voltage (VDD) — 1.2 V
Antaramuka — Synchronous, double data rate
Clocking — Fully synchronous to both clock edges
Technology — CMOS
Standard — JEDEC DDR4 SDRAM
Application — Main memory
On-Die Termination (ODT) — Supported (DDR4 feature)
Bank Group Architecture — DDR4 bank groups (per JEDEC DDR4)

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