H5ANAG8NBJR-PBC vs K4A8G085WB-BCPB Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG8NBJR-PBC disebabkan oleh SK hynix dan K4A8G085WB-BCPB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5ANAG8NBJR-PBC | K4A8G085WB-BCPB |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $4.10 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 16 Gbit (2 GB) | — |
| Organisasi | x8 | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Speed Grade / Data Rate | PBC suffix, DDR4-2666 class | — |
| Kemasan | FBGA-78 (7.5 mm x 11 mm) | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) | — |
| Prefetch | 8n | — |
| Jenis Antaramuka | Parallel, SSTL12 | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| CAS Latency (typical bin) | [DATA_NEEDED: CAS latency] | — |
| Refresh | Self refresh, 1x/2x/4x refresh modes | — |
| Die Revision | BJR | — |
| Status RoHS | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) | [DATA_NEEDED: RoHS status] |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Standard Package Quantity | [DATA_NEEDED: standard quantity] | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Tegangan Pemberi Arus | — | 1.2 V |
| Max Clock Frequency | — | 1066 MHz |
| Max Access Time | — | 0.18 ns |
| Max Standby Current | — | 0.016 mA |
| Refresh Cycles | — | 8192 |
| Technology | — | CMOS, 8Gb B-die |
| Number of Terminals | — | 78 |
| Antaramuka | — | DDR4 SDRAM parallel interface |
| Operating Temperature Grade | — | Commercial (0C to 85C) |