H5TC4G63AFR-PBA vs H5TC4G63AFR-PBJ Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-PBA disebabkan oleh SK hynix dan H5TC4G63AFR-PBJ disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5TC4G63AFR-PBA H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA ✓ Aktif
SK hynix
H5TC4G63AFR-PBJ H5TC4G63AFR-PBJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBJ ✓ Aktif

Pengandingan Spesifikasi

Parametr H5TC4G63AFR-PBA H5TC4G63AFR-PBJ
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $3.98 —
Jenis Ingatan DDR3L SDRAM DDR3L SDRAM
Density 4Gb —
Organisasi 256M x 16 —
Supply Voltage (VDD/VDDQ) 1.35V —
Kadar Data 1866 Mbps (PC3L-14900) [DATA_NEEDED: Data rate (e.g., 1600 Mbps)]
Kemasan 96-ball FBGA 96-ball TFBGA
Ball Pitch 0.8mm —
Number of Banks 8 —
Burst Length 8 and 4 (with burst chop) —
CAS Latency (CL) 11, 12, 13 —
Gambaran Suhu Operasi 0°C to +95°C (Tcase) —
Antaramuka 16-bit I/O —
On-Die Termination (ODT) Yes —
ZQ Calibration Yes Yes
Write Leveling Yes Yes
Auto Self-Refresh Yes Yes
Partial Array Self-Refresh Yes —
RoHS Compliant —
Saiz Ingatan — 4 Gb (256M x 16)
Tegangan Pemberi Arus — 1.35 V
Temperature Grade — Industrial (-40°C to +95°C)
Refresh Cycles — 8192
Package Shape — Rectangular
Number of Terminals — 96
Latensi CAS — [DATA_NEEDED: CAS Latency]
Access Time — 0.225 ns (from H5TC4G63AFR-PBR datasheet)
Data Mask — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Dynamic On-Chip Termination — Yes
Status RoHS — [DATA_NEEDED: RoHS Status]

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