H5TC4G63AFR-PBJ vs H5TC4G63AFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-PBJ disebabkan oleh SK hynix dan H5TC4G63AFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63AFR-PBJ | H5TC4G63AFR-PBA |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $3.98 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gb (256M x 16) | — |
| Tegangan Pemberi Arus | 1.35 V | — |
| Kemasan | 96-ball TFBGA | 96-ball FBGA |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Kadar Data | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 1866 Mbps (PC3L-14900) |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | Yes |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| Status RoHS | [DATA_NEEDED: RoHS Status] | — |
| Density | — | 4Gb |
| Organisasi | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| Burst Length | — | 8 and 4 (with burst chop) |
| CAS Latency (CL) | — | 11, 12, 13 |
| Gambaran Suhu Operasi | — | 0°C to +95°C (Tcase) |
| Antaramuka | — | 16-bit I/O |
| On-Die Termination (ODT) | — | Yes |
| Partial Array Self-Refresh | — | Yes |
| RoHS | — | Compliant |