H5TC4G63AFR-PBJ vs H5TC4G63AFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63AFR-PBJ sa pamamagitan ng SK hynix at H5TC4G63AFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5TC4G63AFR-PBJ | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $3.98 |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gb (256M x 16) | — |
| Volte ng Pagbibigay | 1.35 V | — |
| Packhaging | 96-ball TFBGA | 96-ball FBGA |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Rate ng Data | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 1866 Mbps (PC3L-14900) |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | — |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | Yes |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | — |
| Density | — | 4Gb |
| Organisasyon | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| Burst Length | — | 8 and 4 (with burst chop) |
| CAS Latency (CL) | — | 11, 12, 13 |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C (Tcase) |
| Interface | — | 16-bit I/O |
| On-Die Termination (ODT) | — | Yes |
| Partial Array Self-Refresh | — | Yes |
| RoHS | — | Compliant |