H5TC4G63MFR-PBA vs H5TC4G63AFR-PBI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63MFR-PBA disebabkan oleh SK hynix dan H5TC4G63AFR-PBI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63MFR-PBA | H5TC4G63AFR-PBI |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | — |
| Kadar Data | 1866 Mbps (PC3L-14900) | DDR3-1600 (PC3L-12800) |
| Kemasan | 96-ball FBGA | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) |
| Number of Banks | 8 | 8 |
| Burst Length | BL8, BL4 (with burst chop) | 8 (BL8) |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | Yes |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| Total Memory Size | — | 4 Gb |
| Tegangan Pemberi Arus | — | 1.35 V |
| Latensi CAS | — | Programmable |
| Refresh Period | — | 7.8 us at 85°C |
| Gambaran Suhu Operasi | — | -40°C to +95°C |
| Jenis Pemasangan | — | Surface Mount |
| Number of Terminals | — | 96 |
| Status RoHS | — | Compliant |