IAUC120N06S5L032ATMA1 vs BSC027N04LSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC120N06S5L032ATMA1 disebabkan oleh Infineon dan BSC027N04LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC120N06S5L032ATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 (60 V) | OptiMOS 3 |
| Jenis Transistor | N-Channel, Enhancement Mode | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, T_j) | 120 A | — |
| R_DS(on) Max (V_GS = 10 V) | 3.2 mOhm | — |
| Power Dissipation (P_D, T_C = 25 C) | 94 W | — |
| Kemasan | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 C to +175 C (T_j) | -55°C to +150°C |
| Technology | OptiMOS 5 Trench | OptiMOS 3 (Trench) |
| AEC-Q101 Qualified | Yes | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Total Gate Charge Q_G | [DATA_NEEDED: Q_G total at V_GS=10V] | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 24 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.7 mΩ |
| Power Dissipation (Ta=25°C) | — | 2.5 W |
| Pembuangan Kuasa (TC=25°C) | — | 83 W |
| Boson Bebas | — | Yes |