IAUC120N06S5L032ATMA1 vs BSC027N04LSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUC120N06S5L032ATMA1 sa pamamagitan ng Infineon at BSC027N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUC120N06S5L032ATMA1 BSC027N04LSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 (60 V) OptiMOS 3
Uri ng Transistor N-Channel, Enhancement Mode N-Channel MOSFET
Drain-to-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D, T_j) 120 A —
R_DS(on) Max (V_GS = 10 V) 3.2 mOhm —
Power Dissipation (P_D, T_C = 25 C) 94 W —
Packhaging PG-TDSON-8-34 (5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55 C to +175 C (T_j) -55°C to +150°C
Technology OptiMOS 5 Trench OptiMOS 3 (Trench)
AEC-Q101 Qualified Yes —
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL rating] 1
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) typical and min/max] —
Total Gate Charge Q_G [DATA_NEEDED: Q_G total at V_GS=10V] —
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta=25°C — 24 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 2.7 mΩ
Power Dissipation (Ta=25°C) — 2.5 W
Pwersang Pinahihigpit (TC=25°C) — 83 W
Wala sa Halogen — Yes

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