IAUCN04S7L042GATMA1 vs IAUCN04S6N013TATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L042GATMA1 disebabkan oleh Infineon dan IAUCN04S6N013TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktifInfineon
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
IAUCN04S6N013TATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUCN04S7L042GATMA1 | IAUCN04S6N013TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 40V | — |
| Technology | Trench N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tj) | 77 A | — |
| Maximum Power Dissipation (PD, Tc) | 50 W | — |
| Kemasan | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-LHDSO-10-1 (SSO10T) |
| Jenis Pemasangan | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (Tj) | — |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | — |
| Packing | Tape & Reel (per -ATMA1 suffix) | — |
| Target Substrate | IMS substrate and legacy FR4 designs | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 230 A at T<sub>C</sub> |
| R<sub>DS(on)</sub> (max) | — | 1.32 mΩ at V<sub>GS</sub> = 10 V |
| Power Dissipation (P<sub>D</sub>) | — | 133 W at T<sub>C</sub> |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 2.6 V (typ) |
| Total Gate Charge (Q<sub>g</sub>) | — | 52 nC at V<sub>GS</sub> = 10 V |
| Input Capacitance (C<sub>iss</sub>) | — | 1.08 nF |
| Output Capacitance (C<sub>oss</sub>) | — | 3.7 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | — | 51 pF |
| Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |