IAUCN04S7L042GATMA1 vs IAUCN04S6N013TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7L042GATMA1 sa pamamagitan ng Infineon at IAUCN04S6N013TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ NakahandaInfineon
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
IAUCN04S6N013TATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN04S7L042GATMA1 | IAUCN04S6N013TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 40V | — |
| Technology | Trench N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tj) | 77 A | — |
| Maximum Power Dissipation (PD, Tc) | 50 W | — |
| Packhaging | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-LHDSO-10-1 (SSO10T) |
| Uri ng Pagpapasok | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C (Tj) | — |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | — |
| Packing | Tape & Reel (per -ATMA1 suffix) | — |
| Target Substrate | IMS substrate and legacy FR4 designs | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 230 A at T<sub>C</sub> |
| R<sub>DS(on)</sub> (max) | — | 1.32 mΩ at V<sub>GS</sub> = 10 V |
| Power Dissipation (P<sub>D</sub>) | — | 133 W at T<sub>C</sub> |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 2.6 V (typ) |
| Total Gate Charge (Q<sub>g</sub>) | — | 52 nC at V<sub>GS</sub> = 10 V |
| Input Capacitance (C<sub>iss</sub>) | — | 1.08 nF |
| Output Capacitance (C<sub>oss</sub>) | — | 3.7 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | — | 51 pF |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |