IAUCN04S7N056DATMA1 vs IAUCN04S7N037GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N056DATMA1 disebabkan oleh Infineon dan IAUCN04S7N037GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IAUCN04S7N056DATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUCN04S7N056DATMA1 | — |
| Series | OptiMOS 5 40V | OptiMOS 7 |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 60 A (Tj) | — |
| RDS(on) (typ) | 5.59 mΩ | — |
| Power Dissipation (Pd) | 41 W (Tc) | — |
| Gambaran Suhu Operasi | -55°C to +175°C | [DATA_NEEDED: junction/ambient temperature limits] |
| Kemasan | PG-TDSON-8-61 (TDSON EP, 5x6 mm) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Jenis Pemasangan | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS 5 trench MOSFET | Trench MOSFET, N-Channel |
| Status RoHS | Compliant | Compliant |
| Packaging Type | Tape & Reel | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Aras MSL | — | [DATA_NEEDED: MSL level] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |