IAUCN04S7N056DATMA1 vs IAUCN04S7N037GATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N056DATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N056DATMA1

IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΞ© | Infineon

IAUCN04S7N056DATMA1 βœ“ Active
Infineon
IAUCN04S7N037GATMA1

IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N056DATMA1 IAUCN04S7N037GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.89
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7N056DATMA1 β€”
Series OptiMOS 5 40V OptiMOS 7
Transistor Type N-Channel MOSFET β€”
Drain-to-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) 60 A (Tj) β€”
RDS(on) (typ) 5.59 mΞ© β€”
Power Dissipation (Pd) 41 W (Tc) β€”
Operating Temperature Range -55Β°C to +175Β°C [DATA_NEEDED: junction/ambient temperature limits]
Package PG-TDSON-8-61 (TDSON EP, 5x6 mm) SSO4G 5x6 mmΒ² (PG-THSOG-4-1)
Mounting Type Surface Mount Surface Mount (IMS substrate attach compatible)
Automotive Qualification AEC-Q101 AEC-Q101
Technology OptiMOS 5 trench MOSFET Trench MOSFET, N-Channel
RoHS Status Compliant Compliant
Packaging Type Tape & Reel β€”
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at Tj β€” 91 A
On-State Resistance RDS(on) typical β€” 3.65 mΞ© at VGS = 10 V
Power Dissipation (PD) at Tc β€” 57 W
Channel Type β€” N-Channel
Operating Mode β€” Enhancement
MSL Level β€” [DATA_NEEDED: MSL level]
Gate Charge (Qg) typical β€” [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]

Datasheets & Resources

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