IAUCN08S7L024ATMA1 vs IPC50N04S5L5R5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7L024ATMA1 disebabkan oleh Infineon dan IPC50N04S5L5R5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN08S7L024ATMA1 IPC50N04S5L5R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS™ 7 N-channel trench MOSFET —
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) 177 A (Tj) —
Continuous Drain Current (Silicon-limited) 150 A —
On-Resistance RDS(on) max 2.4 mΩ at VGS=10 V —
Power Dissipation (PD) 148 W (Tc) —
Kemasan PG-TDSON-8-34 (SSO8 5x6 mm²) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (Tj) -55 °C to +175 °C
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg typ] —
Avalanche Energy Rated Yes (single-pulse) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant —
Aras MSL MSL1 (per JEDEC J-STD-020) —
Jenis Transistor — N-Channel MOSFET
Mode — Enhancement Mode
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga