IAUCN08S7L033ATMA1 vs IAUC120N06S5N017ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7L033ATMA1 disebabkan oleh Infineon dan IAUC120N06S5N017ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN08S7L033ATMA1 IAUC120N06S5N017ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 OptiMOS 5
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V 60 V
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) —
Gambaran Suhu Operasi -55°C to +175°C (TJ) -55°C to +175°C
Kemasan PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TDSON-8-43 (TDSON-8 EP)
Jenis Pemasangan Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) —
Technology OptiMOS 7 trench MOSFET —
Status RoHS Compliant —
Aras MSL 1 (per JEDEC J-STD-020, typical for this package) MSL1 (260°C peak reflow)
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID, Tc=25°C) — 120 A
Pulsed Drain Current (IDM) — 757 A
RDS(on) at VGS=10V — 1.7 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3.4 V (typ)
Total Gate Charge (Qg) at VGS=10V — 95.9 nC
Input Capacitance (Ciss) — 6.952 nF
Reverse Transfer Capacitance (Crss) — 84 pF
Output Capacitance (Coss) — 1.507 nF
Power Dissipation (PD, Tc=25°C) — 167 W
AEC-Q101 Qualification — Yes (Automotive Grade)
RoHS Compliance — Green Product (RoHS compliant)

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