IAUCN10S5L110TATMA1 vs IAUCN10S7L180ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S5L110TATMA1 disebabkan oleh Infineon dan IAUCN10S7L180ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S5L110TATMA1 IAUCN10S7L180ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS™ 7
Technology N-Channel MOSFET, Trench, Logic Level —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
Suhu Hubungan Operasi -55 °C to +175 °C -55 °C to +175 °C
Storage Temperature [DATA_NEEDED: storage temperature] —
Kemasan PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled PG-TDSON-8-34 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (260°C peak reflow) —
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification —
Status RoHS Compliant EU RoHS Compliant with Exemption
Jenis Transistor — N-Channel MOSFET
Number of Channels — 1
Maximum Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tj) — 39 A
Power Dissipation (PD, Tc=25°C) — 58 W
Drain-Source On-Resistance (RDS(on)) — 16.1 mΩ @ VGS=10 V
Typical RDS(on) — 18 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.6 V
Maximum Gate-Source Voltage (VGS) — ±20 V (±16 V per JLCPCB listing)
Total Gate Charge (Qg) — 11 nC
Input Capacitance (Ciss) — 272 pF
Output Capacitance (Coss) — 668 pF
Reverse Transfer Capacitance (Crss) — 7 pF
Automotive Qualified — Yes
Configuration — Single Quad Drain Triple Source
Channel Mode — Enhancement
Part Status — Active

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