IAUTN04S7N003ATMA1 vs IAUCN08S7L033ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUTN04S7N003ATMA1 disebabkan oleh Infineon dan IAUCN08S7L033ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUTN04S7N003ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 7 N-Channel Trench MOSFET | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at Tj | 350 A | 130 A |
| Power Dissipation (PD) at Tc=25°C | 357 W | 118 W |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V (typical Infineon OptiMOS 7 limit) |
| Avalanche Single-Pulse Current | [DATA_NEEDED: IAS] | — |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 °C) | — |
| Body Diode Pulse Current | 3510 A (tp = 100 µs, Tj = 25 °C) | — |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A | — |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max | — |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C (Tj) | -55°C to +175°C (TJ) |
| Kemasan | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| Jenis Transistor | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |