IAUTN04S7N003ATMA1 vs IAUCN08S7L033ATMA1 比較
詳細並排比較 IAUTN04S7N003ATMA1 由 Infineon 與 IAUCN08S7L033ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 ✓ 啟用中規格比較
| 參數 | IAUTN04S7N003ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 7 N-Channel Trench MOSFET | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at Tj | 350 A | 130 A |
| Power Dissipation (PD) at Tc=25°C | 357 W | 118 W |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V (typical Infineon OptiMOS 7 limit) |
| Avalanche Single-Pulse Current | [DATA_NEEDED: IAS] | — |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 °C) | — |
| Body Diode Pulse Current | 3510 A (tp = 100 µs, Tj = 25 °C) | — |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A | — |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max | — |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max | — |
| 工作溫度範圍 | -55 °C to +175 °C (Tj) | -55°C to +175°C (TJ) |
| 封裝 | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| 電晶體類型 | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |