IAUTN04S7N003ATMA1 vs IAUCN08S7L033ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUTN04S7N003ATMA1 tarafından Infineon ve IAUCN08S7L033ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUTN04S7N003ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Technology | OptiMOS 7 N-Channel Trench MOSFET | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at Tj | 350 A | 130 A |
| Power Dissipation (PD) at Tc=25°C | 357 W | 118 W |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V (typical Infineon OptiMOS 7 limit) |
| Avalanche Single-Pulse Current | [DATA_NEEDED: IAS] | — |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 °C) | — |
| Body Diode Pulse Current | 3510 A (tp = 100 µs, Tj = 25 °C) | — |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A | — |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max | — |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max | — |
| İşletim Sıcaklığı Aralığı | -55 °C to +175 °C (Tj) | -55°C to +175°C (TJ) |
| Paket | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Montaj Türü | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| Transistor Türü | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |