IAUZN10S7L289ATMA1 vs IAUZ18N10S5L420ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZN10S7L289ATMA1 disebabkan oleh Infineon dan IAUZ18N10S5L420ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUZN10S7L289ATMA1 | IAUZ18N10S5L420ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | — |
| Technology | Trench MOSFET (N-Channel) | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tj) | 27 A | — |
| Power Dissipation (Ptot, Tc=25°C) | 45 W | — |
| On-State Resistance (RDS(on), max, VGS=10V) | 28.9 mΩ | — |
| Kemasan | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Grade | AEC-Q100 qualified (Automotive MOSFET) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 1.7 V to 2.7 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Gambaran Suhu Operasi | -55°C to +175°C (Tj) | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 |
| Status RoHS | Compliant | Compliant |
| Kiraan Pin | 8 | — |
| RoHS Compliance | Yes | — |
| Series | — | OptiMOS 5 100V |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Total Gate Charge (Qg) typ. | — | 8.5 nC |
| Power Dissipation (PD) at TC=25°C | — | 30 W |
| Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Configuration | — | Single with built-in diode |