IGD08N120S7ATMA1 vs IGW40N120H3FKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IGD08N120S7ATMA1 disebabkan oleh Infineon dan IGW40N120H3FKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IGD08N120S7ATMA1 | IGW40N120H3FKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | IGBTs | IGBTs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Suhu Hubungan Operasi | -40C to +175C (industry grade) | — |
| Kemasan | PG-TO252-3 (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Technology | Trench Field Stop, 7th generation | — |
| Configuration | Single | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Series | — | TRENCHSTOP™ IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | — | 1200 V |
| Current - Collector (Ic) Max | — | 80 A |
| Current - Collector Pulsed (Icm) | — | 160 A |
| Power - Max | — | 483 W |
| Gate Charge (Qg) | — | 185 nC |
| Input Type | — | Standard |
| Operating Temperature (TJ) | — | -40 °C to +175 °C |
| Kemasan / Case | — | PG-TO247-3-1 (TO-247-3) |
| Packaging | — | Tube |
| Continuous Collector Current (Ic) | — | 40 A (per Infineon product page) |