IGL65R080D2XUMA1 vs IGLR70R200D2SXUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IGL65R080D2XUMA1 disebabkan oleh Infineon dan IGLR70R200D2SXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IGL65R080D2XUMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | CoolGaN G5 |
| Jenis Transistor | N-Channel GaN HEMT (enhancement-mode) | — |
| Drain-Source Voltage (VDS) | 650 V | 700 V |
| Continuous Drain Current (ID, Tc) | 18 A | 9.3 A |
| Power Dissipation (PD, Tc) | 81 W | 34 W |
| On-Resistance RDS(on) | 80 mΩ (typical) | — |
| Kemasan | PG-TSON-8-U06 (ThinPAK 8x8) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Jenis Pemasangan | Surface Mount, wettable flank | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C (TJ) | -40 °C to +150 °C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Technology | GaN-on-Si, 200 mm wafer | GaN HEMT (E-mode, enhancement-mode) |
| Typical Applications | SMPS, totem-pole PFC, LLC, USB-PD adapters | — |
| Status RoHS | Compliant | — |
| Aras MSL | 1 (per JEDEC J-STD-020, where stated) | — |
| Channel Type | — | N-Channel |
| On-Resistance (RDS(on), max) | — | 200 mΩ |
| Total Gate Charge (Qg) | — | 1.26 nC |
| Output Capacitance (Coss) | — | 91 pF |
| Reverse Transfer Capacitance (Crss) | — | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.2 V |
| RoHS | — | Compliant |