IGL65R080D2XUMA1 vs IGLR70R200D2SXUMA1 Comparison
Detailed side-by-side comparison of IGL65R080D2XUMA1 by Infineon and IGLR70R200D2SXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGL65R080D2XUMA1
IGL65R080D2XUMA1 - 650V 80mΞ© CoolGaN G5 Transistor | Infineon
IGL65R080D2XUMA1 β ActiveInfineon
IGLR70R200D2SXUMA1
IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΞ© | Infineon
IGLR70R200D2SXUMA1 β ActiveSpecification Comparison
| Parameter | IGL65R080D2XUMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.97 | $1.24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | CoolGaN G5 |
| Transistor Type | N-Channel GaN HEMT (enhancement-mode) | β |
| Drain-Source Voltage (VDS) | 650 V | 700 V |
| Continuous Drain Current (ID, Tc) | 18 A | 9.3 A |
| Power Dissipation (PD, Tc) | 81 W | 34 W |
| On-Resistance RDS(on) | 80 mΞ© (typical) | β |
| Package | PG-TSON-8-U06 (ThinPAK 8x8) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Mounting Type | Surface Mount, wettable flank | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (TJ) | -40 Β°C to +150 Β°C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Technology | GaN-on-Si, 200 mm wafer | GaN HEMT (E-mode, enhancement-mode) |
| Typical Applications | SMPS, totem-pole PFC, LLC, USB-PD adapters | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020, where stated) | β |
| Channel Type | β | N-Channel |
| On-Resistance (RDS(on), max) | β | 200 mΞ© |
| Total Gate Charge (Qg) | β | 1.26 nC |
| Output Capacitance (Coss) | β | 91 pF |
| Reverse Transfer Capacitance (Crss) | β | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | β | 1.2 V |
| RoHS | β | Compliant |