IKD15N60RFATMA1 vs IPL60R285P7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IKD15N60RFATMA1 disebabkan oleh Infineon dan IPL60R285P7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IKD15N60RFATMA1 IPL60R285P7AUMA1
Merek Infineon Infineon
Kategori IGBTs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) Superjunction (SJ) N-channel MOSFET
Collector-Emitter Voltage (VCES) 600 V —
Continuous Collector Current (IC at TC=25C) 30 A —
Continuous Collector Current (IC at TC=100C) 15 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: ICM value] —
Gate-Emitter Voltage (VGES) +/-20 V —
Gate-Emitter Threshold (VGE(th)) [DATA_NEEDED: VGE(th) typical value] —
VCE(sat) at IC=15A, VGE=15V 1.5 V (typical) —
Maximum Power Dissipation (Ptot) 250 W —
Suhu Hubungan Operasi -40C to +175C —
Integrated Anti-Parallel Diode Yes (RC-Drives Fast, co-packaged) —
Kemasan PG-TO252-3 (DPAK), 3 pins (2 + tab) —
Jenis Pemasangan Surface Mount Surface Mount
Switching Speed Class Hard-switching, RC-Drives Fast —
Target Application Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) —
RoHS Compliance Compliant —
Manufacturer — Infineon Technologies
Series — CoolMOS P7
Drain-to-Source Voltage (V(BR)DSS) — 600 V
Continuous Drain Current (ID) at Tc=25C — 13 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM value]
On-State Resistance (RDS(on)) max at VGS=10V — 285 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Output Capacitance (Coss) typ — [DATA_NEEDED: Coss value]
Maximum Power Dissition (PD) at Tc=25C — 59 W
Gambaran Suhu Operasi — -55C to +150C (junction)
Kemasan / Case — PG-VSON-4 (surface mount)
Configuration — Single N-channel, 4 pins (Gate, Drain, Source, Tab)
Status RoHS — Compliant
Gate ESD Protection — Integrated
Aras MSL — 1 (per Infineon PG-VSON-4 family)

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