IPB017N10N5LFATMA1 vs BSC027N04LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB017N10N5LFATMA1 disebabkan oleh Infineon dan BSC027N04LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB017N10N5LFATMA1 BSC027N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 Linear FET —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) OptiMOS 3 (Trench)
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID) @ TC=25C 180 A —
Continuous Drain Current (ID) @ TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) @ TC=25C 313 W —
Drain-Source On-Resistance (RDS(on)) @ VGS=10V 1.7 mΩ (max) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Gambaran Suhu Operasi -55C to +175C (junction) -55°C to +150°C
Kemasan / Case PG-TO263-7 (D2PAK-7), surface mount —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL 1 (unlimited) 1
Avalanche Rated Yes —
Linear-Mode (SOA) Optimized Yes (OptiMOS Linear FET) —
Product Family — OptiMOS 3
Jenis Transistor — N-Channel MOSFET
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta=25°C — 24 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
On-Resistance RDS(on) max @ VGS=10V — 2.7 mΩ
Power Dissipation (Ta=25°C) — 2.5 W
Pembuangan Kuasa (TC=25°C) — 83 W
Kemasan — PG-TDSON-8-1 (SuperSO8 5x6)
Boson Bebas — Yes

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