IPB100N12S305ATMA2 vs IPP075N15N3GXKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB100N12S305ATMA2 disebabkan oleh Infineon dan IPP075N15N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB100N12S305ATMA2 IPP075N15N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 120V —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 120 V 150 V
Continuous Drain Current (ID) at Tc 100 A —
Power Dissipation (PD) at Tc 300 W —
Drain-Source On-Resistance RDS(on) 0.0048 ohm (4.8 mΩ) at VGS=10 V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Maximum Junction Temperature 175 °C —
Avalanche Energy (EAS) 1445 mJ —
Kemasan / Case PG-TO263-3-2 (D2PAK) —
Jenis Pemasangan Surface Mount Through Hole
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) [DATA_NEEDED: junction operating temperature range]
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant —
Aras MSL [DATA_NEEDED: MSL rating] —
Product Family — OptiMOS 3
Technology — N-Channel MOSFET (OptiMOS 3)
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Kemasan — PG-TO220-3 (TO-220 through-hole)
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

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