IPB120N04S402ATMA1 vs IPB100N04S4H2ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB120N04S402ATMA1 disebabkan oleh Infineon dan IPB100N04S4H2ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPB120N04S402ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| FET Type | N-Channel, Enhancement Mode | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, TC) | 120 A | — |
| Power Dissipation (PD, TC) | 158 W | — |
| RDS(on) (typ @ VGS=10 V) | 1.8 mΩ | — |
| Kemasan | PG-TO263-3 (D2PAK) | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (2 + Tab) | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C | — |
| Maximum Junction Temperature | 175 °C | — |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy Rating | 100% Avalanche Tested | — |
| Tingkat sensitiviti Air Nama (MSL) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| RoHS Compliance | Green Product (RoHS compliant) | Compliant (Green Product) |
| Technology | — | OptiMOS-T2 (trench gate) |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Aras MSL | — | MSL1 (up to 260C peak reflow) |
| Avalanche Energy (EAS) | — | 100% avalanche tested |