IPD046N08N5ATMA1 vs IPB027N10N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD046N08N5ATMA1 disebabkan oleh Infineon dan IPB027N10N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD046N08N5ATMA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS™ 5 80V | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| Gambaran Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan / Case | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | OptiMOS 3 (Trench MOSFET) |
| Status RoHS | ROHS3 Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: moisture sensitivity level] |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Gambaran Suhu Operasi | — | -55°C to +175°C (TJ) |
| Kemasan | — | PG-TO263-3 (D2PAK) |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg at VGS=10V] |