IPD30N10S3L34ATMA1 vs IPD33CN10NGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N10S3L34ATMA1 disebabkan oleh Infineon dan IPD33CN10NGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD30N10S3L34ATMA1 IPD33CN10NGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS-T2 —
Jenis Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc=25°C) 30 A —
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (PD, Tc=25°C) 57 W —
Drain-Source On-Resistance (RDS(on) max) 31 mΩ @ VGS=10 V —
Gate-Source Threshold Voltage (VGS(th) typ) 1.7 V (range 1.0 V to 2.5 V) —
Total Gate Charge (Qg typ) 23 nC —
Suhu Hubungan Operasi -55°C to +175°C —
Kemasan PG-TO252-3-11 (DPAK-2 / SC-63) PG-TO252-3 (DPAK), Surface Mount
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Aras MSL 1 (JEDEC J-STD-020, 260°C peak reflow) 1
RoHS / REACH Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated 100% Avalanche tested —
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 27 A
Power Dissipation (PD, Tc) — 58 W
Technology — OptiMOS (Trench)
Kiraan Pin — 3 (Gate, Drain, Source)
Gambaran Suhu Operasi — -55C to +175C (TJ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
Status RoHS — Compliant
Lead-Free — Yes

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