IPD30N10S3L34ATMA2 vs IPD30N06S2L13ATMA4 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N10S3L34ATMA2 disebabkan oleh Infineon dan IPD30N06S2L13ATMA4 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD30N10S3L34ATMA2 | IPD30N06S2L13ATMA4 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | Planar (OptiMOS) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Status RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS |
| Channel Type | — | N-Channel |
| Mode | — | Enhancement |
| Drain-Source Voltage (Vds) | — | 55 V |
| Continuous Drain Current (Id) | — | 30 A (Tc) |
| Power Dissipation (Pd) | — | 136 W (Tc) |
| Kemasan | — | PG-TO252-3-11 (DPAK) |
| Suhu Operasi | — | -55 °C to +175 °C (Tj) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Lead-Free / RoHS | — | Yes (Green Package) |
| Avalanche Tested | — | 100 % production-tested |
| On-State Resistance (Rds(on)) | — | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | — | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | — | [DATA_NEEDED: trr typ] |
| Kiraan Pin | — | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | — | Yes (T&R per IEC 60286-3) |