IPD33CN10NGATMA1 vs IPD90N06S407ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD33CN10NGATMA1 disebabkan oleh Infineon dan IPD90N06S407ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD33CN10NGATMA1 | IPD90N06S407ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 27 A | — |
| Power Dissipation (PD, Tc) | 58 W | — |
| Technology | OptiMOS (Trench) | — |
| Kemasan | PG-TO252-3 (DPAK), Surface Mount | PG-TO252-3-11 (DPAK) |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (TJ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Aras MSL | 1 | — |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D at T_C) | — | 90 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | — | 6.9 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | 4 V at 40 uA |
| Total Gate Charge (Q_G) at V_GS=10 V | — | 56 nC |
| Maximum Power Dissipation (P_D at T_C) | — | 79 W |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Lead-Free / RoHS | — | Yes (Green Product) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (up to 260 C peak reflow) |
| Automotive Qualification | — | AEC-Q101 Qualified |
| Avalanche Rating | — | 100% Avalanche Tested |