IPD33CN10NGATMA1 vs IPD90N06S407ATMA2 Comparison

Detailed side-by-side comparison of IPD33CN10NGATMA1 by Infineon and IPD90N06S407ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 βœ“ Active

Specification Comparison

Parameter IPD33CN10NGATMA1 IPD90N06S407ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.84
FET Type N-Channel N-Channel Enhancement Mode
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID, Tc) 27 A β€”
Power Dissipation (PD, Tc) 58 W β€”
Technology OptiMOS (Trench) β€”
Package PG-TO252-3 (DPAK), Surface Mount PG-TO252-3-11 (DPAK)
Pin Count 3 (Gate, Drain, Source) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (TJ) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] β€”
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
MSL Level 1 β€”
Drain-to-Source Voltage (V_DS) β€” 60 V
Continuous Drain Current (I_D at T_C) β€” 90 A
Pulsed Drain Current (I_DM) β€” [DATA_NEEDED: pulsed drain current]
R_DS(on) Max at V_GS=10 V, I_D=90 A β€” 6.9 mOhm
Gate Threshold Voltage (V_GS(th)) β€” 4 V at 40 uA
Total Gate Charge (Q_G) at V_GS=10 V β€” 56 nC
Maximum Power Dissipation (P_D at T_C) β€” 79 W
Operating Junction Temperature β€” -55 C to +175 C
Storage Temperature β€” [DATA_NEEDED: storage temperature range]
Lead-Free / RoHS β€” Yes (Green Product)
MSL (Moisture Sensitivity Level) β€” MSL1 (up to 260 C peak reflow)
Automotive Qualification β€” AEC-Q101 Qualified
Avalanche Rating β€” 100% Avalanche Tested

Datasheets & Resources

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