IPD50N03S4L06ATMA1 vs BSZ031NE2LS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50N03S4L06ATMA1 disebabkan oleh Infineon dan BSZ031NE2LS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD50N03S4L06ATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (V_DS) | 30 V | — |
| Continuous Drain Current (I_D, Tc) | 50 A | — |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V | — |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V | — |
| Input Capacitance (C_iss) | 2.33 nF | — |
| Output Capacitance (C_oss) | 600 pF | — |
| Reverse Transfer Capacitance (C_rss) | 34 pF | — |
| Power Dissipation (P_D) | 56 W at Tc = 25 C | — |
| Suhu Hubungan Operasi | -55 C to +175 C | -55 C to +150 C |
| Kemasan | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (up to 260 C peak reflow) | [DATA_NEEDED: MSL] |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| Status RoHS | Compliant (Green Package) | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ031NE2LS5ATMA1 |
| Technology / Platform | — | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | — | 25 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta=25C | — | 19 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | — | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 30 W |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |