IPD50N03S4L06ATMA1 vs BSZ031NE2LS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N03S4L06ATMA1 sa pamamagitan ng Infineon at BSZ031NE2LS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 ✓ Nakahanda
Infineon
BSZ031NE2LS5ATMA1 BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon

BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon

BSZ031NE2LS5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD50N03S4L06ATMA1 BSZ031NE2LS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (V_DS) 30 V —
Continuous Drain Current (I_D, Tc) 50 A —
On-State Resistance (R_DS(on) max) 5.5 mOhm at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th) typ) 2.2 V —
Total Gate Charge (Q_g) 31 nC at V_GS = 10 V —
Input Capacitance (C_iss) 2.33 nF —
Output Capacitance (C_oss) 600 pF —
Reverse Transfer Capacitance (C_rss) 34 pF —
Power Dissipation (P_D) 56 W at Tc = 25 C —
Temperature ng Junction na Operasyon -55 C to +175 C -55 C to +150 C
Packhaging PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL1 (up to 260 C peak reflow) [DATA_NEEDED: MSL]
Automotive Qualification AEC-Q101 —
Avalanche Rating 100% Avalanche Tested —
Tindminan RoHS Compliant (Green Package) Compliant
Manufacturer — Infineon Technologies
Part Number — BSZ031NE2LS5ATMA1
Technology / Platform — OptiMOS 5 25V/30V N-channel trench MOSFET
Drain-Source Voltage (VDS) max — 25 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Continuous Drain Current (ID) at Ta=25C — 19 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max @ VGS=10 V — 3.1 mOhm
RDS(on) typical @ VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 30 W
Lead-Free — Yes
Wala sa Halogen — Yes

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