IPD60R385CPATMA1 vs BSC077N12NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R385CPATMA1 disebabkan oleh Infineon dan BSC077N12NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD60R385CPATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ CP (5th generation) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 600 V | — |
| Drain-Source On-Resistance (RDS(on)) | 385 mΩ (typ, VGS = 10 V) | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Pulsed Drain Current (IDM) | 27 A | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at TC=25°C | 83 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Suhu Hubungan Operasi | -55 °C to +150 °C | -55C to +150C |
| Kemasan / Case | PG-TO252-3 (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source; tab = Drain) | 8 |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 |
| Part Family | — | OptiMOS 3 (120 V) |
| Jenis Transistor | — | N-Channel MOSFET (enhancement-mode trench) |
| Drain-Source Voltage (VDS) | — | 120 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta | — | 13.4 A |
| Continuous Drain Current (ID) at Tc | — | 98 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 7.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | — | 139 W |
| Kemasan | — | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Automotive Grade | — | Yes (per Infineon part number suffix / datasheet) |