IPD60R385CPATMA1 vs BSC077N12NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R385CPATMA1 sa pamamagitan ng Infineon at BSC077N12NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD60R385CPATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ CP (5th generation) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 600 V | — |
| Drain-Source On-Resistance (RDS(on)) | 385 mΩ (typ, VGS = 10 V) | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Pulsed Drain Current (IDM) | 27 A | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at TC=25°C | 83 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Temperature ng Junction na Operasyon | -55 °C to +150 °C | -55C to +150C |
| Packhaging / Kaso | PG-TO252-3 (DPAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain, Source; tab = Drain) | 8 |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 |
| Part Family | — | OptiMOS 3 (120 V) |
| Uri ng Transistor | — | N-Channel MOSFET (enhancement-mode trench) |
| Drain-Source Voltage (VDS) | — | 120 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta | — | 13.4 A |
| Continuous Drain Current (ID) at Tc | — | 98 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 7.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | — | 139 W |
| Packhaging | — | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Automotive Grade | — | Yes (per Infineon part number suffix / datasheet) |