IPD80R1K4P7ATMA1 vs IPN80R1K2P7ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD80R1K4P7ATMA1 disebabkan oleh Infineon dan IPN80R1K2P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD80R1K4P7ATMA1 | IPN80R1K2P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | N-Channel Superjunction | Superjunction (CoolMOS) |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| On-Resistance (RDS(on)) typ/max | 1.2 ohm typ / 1.4 ohm max | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Pembuangan Kuasa (Ptot) | 32 W | — |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Kemasan | PG-TO252-2 (DPAK) | SOT-223 (3-pin, 2 + tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain/Tab, Source) | — |
| Status RoHS | Compliant | — |
| REACH Status | Compliant | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Avalanche Energy Rated | Yes | — |
| Body Diode | Integrated, fast recovery | — |
| Family / Series | — | CoolMOS P7 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage VDSS | — | 800 V |
| Continuous Drain Current ID (Tc) | — | 4.5 A |
| Maximum RDS(on) | — | 1200 mΩ at VGS = 10 V |
| Power Dissipation PD (Tc) | — | 6.8 W |
| Gate-Source Voltage VGSS | — | [DATA_NEEDED: VGSS absolute maximum] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Gambaran Suhu Operasi | — | -55°C to +150°C (TJ) |
| ESD Protection | — | ESD-protected gate (per CoolMOS P7 family) |
| RoHS Compliance | — | Compliant |