IPD80R1K4P7ATMA1 vs IPN80R1K2P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD80R1K4P7ATMA1 sa pamamagitan ng Infineon at IPN80R1K2P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 ✓ Nakahanda
Infineon
IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 - 800V CoolMOS P7 1.2Ω N-MOSFET | Infineon

IPN80R1K2P7ATMA1 - 800V CoolMOS P7 1.2Ω N-MOSFET | Infineon

IPN80R1K2P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD80R1K4P7ATMA1 IPN80R1K2P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
Technology N-Channel Superjunction Superjunction (CoolMOS)
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID) at Tc=25C 4 A —
On-Resistance (RDS(on)) typ/max 1.2 ohm typ / 1.4 ohm max —
Gate Threshold Voltage (VGS(th)) 3.5 V (typ) —
Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
Pwersang Pinahihigpit (Ptot) 32 W —
Temperature ng Junction na Operasyon -55C to +150C —
Packhaging PG-TO252-2 (DPAK) SOT-223 (3-pin, 2 + tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Gate, Drain/Tab, Source) —
Tindminan RoHS Compliant —
REACH Status Compliant —
Level ng MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Avalanche Energy Rated Yes —
Body Diode Integrated, fast recovery —
Family / Series — CoolMOS P7
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage VDSS — 800 V
Continuous Drain Current ID (Tc) — 4.5 A
Maximum RDS(on) — 1200 mΩ at VGS = 10 V
Power Dissipation PD (Tc) — 6.8 W
Gate-Source Voltage VGSS — [DATA_NEEDED: VGSS absolute maximum]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Hanay ng Temperature na Operasyon — -55°C to +150°C (TJ)
ESD Protection — ESD-protected gate (per CoolMOS P7 family)
RoHS Compliance — Compliant

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