IPG20N04S408ATMA1 vs IPG20N10S4L35ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N04S408ATMA1 disebabkan oleh Infineon dan IPG20N10S4L35ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPG20N04S408ATMA1 | IPG20N10S4L35ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel | 2 N-Channel (Dual) |
| Technology | OptiMOS (trench MOSFET) | — |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | — |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | — |
| Maximum Power Dissipation (P_D) | 65 W | — |
| Suhu Hubungan Operasi | -55 degC to +175 degC | — |
| Kemasan | PG-TDSON-8-4 (SuperSO8 dual) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (260 degC peak reflow) | MSL1 (up to 260°C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100 percent tested | 100% Avalanche Tested |
| Channel Count | 2 (independent) | — |
| Operating Mode | Enhancement mode, Normal Level | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPG20N10S4L35ATMA1 |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | — | 20 A |
| R<sub>DS(on)</sub> Max | — | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A |
| Gate Threshold (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: typical Vgs(th) value] |
| Power Dissipation (P<sub>D</sub>) | — | 43 W |
| Suhu Operasi | — | 175°C max junction |
| Kemasan / Case | — | PG-TDSON-8-4 (8-Pin TDSON EP) |
| Automotive Qualification | — | AEC-Q101 |
| Series | — | OptiMOS™, Automotive |