IPG20N06S2L65ATMA1 vs IPG20N06S2L65AATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N06S2L65ATMA1 disebabkan oleh Infineon dan IPG20N06S2L65AATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPG20N06S2L65ATMA1 IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon

IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon

IPG20N06S2L65ATMA1 ✓ Aktif
Infineon
IPG20N06S2L65AATMA1 IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon

IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon

IPG20N06S2L65AATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPG20N06S2L65ATMA1 IPG20N06S2L65AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel, Logic Level Dual N-Channel (Half Bridge / Independent)
Technology OptiMOS-T2 (Planar Trench 55V) OptiMOS Trench MOSFET
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 20 A per channel 20 A (per channel)
RDS(on) at VGS=10V 65 mΩ typical —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic level) —
Total Power Dissipation (Ptot) 43 W —
Gambaran Suhu Operasi -55°C to +175°C —
Kemasan PG-TDSON-8-4 (TDSON-8 EP) PG-TDSON-8-10 (TDSON-8 EP, wettable flank)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (260°C peak reflow) MSL1 (peak reflow 260 C)
Avalanche Rating 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Qualified —
RoHS Compliance RoHS Compliant (Green Product) —
Packaging Tape & Reel (TMA1 suffix) —
Manufacturer — Infineon Technologies
Series — OptiMOS
Drain-to-Source Voltage (VDS) — 55 V
Power Dissipation (PD) — 43 W
Gate Threshold (VGS(th)) — Logic-Level
Suhu Operasi — -55 C to +175 C
AEC-Q101 Qualification — Yes
Status RoHS — Compliant (Green Product)
Avalanche Tested — 100% (per datasheet)
AOI Compatible — Yes (wettable flank)

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