IPG20N06S2L65ATMA1 vs IPG20N06S2L65AATMA1 比較
詳細並排比較 IPG20N06S2L65ATMA1 由 Infineon 與 IPG20N06S2L65AATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG20N06S2L65ATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | Dual N-Channel, Logic Level | Dual N-Channel (Half Bridge / Independent) |
| Technology | OptiMOS-T2 (Planar Trench 55V) | OptiMOS Trench MOSFET |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A per channel | 20 A (per channel) |
| RDS(on) at VGS=10V | 65 mΩ typical | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic level) | — |
| Total Power Dissipation (Ptot) | 43 W | — |
| 工作溫度範圍 | -55°C to +175°C | — |
| 封裝 | PG-TDSON-8-4 (TDSON-8 EP) | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL1 (260°C peak reflow) | MSL1 (peak reflow 260 C) |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS Compliance | RoHS Compliant (Green Product) | — |
| Packaging | Tape & Reel (TMA1 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| 工作溫度 | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| RoHS 狀態 | — | Compliant (Green Product) |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |