IPG20N10S436AATMA1 vs BSC030N08NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N10S436AATMA1 disebabkan oleh Infineon dan BSC030N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPG20N10S436AATMA1 BSC030N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Configuration Dual N-Channel (2 Elements with Built-in Diode) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 20 A (per channel) —
Total Power Dissipation (PD) 43 W —
Operating Mode Enhancement Mode —
Kemasan PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Operating Temperature (TJ max) +175 C —
JESD-609 Code e3 —
Aras MSL MSL1 (260 C peak reflow) 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% —
AOI Compatible Yes (Wettable Flank) —
Status RoHS Compliant (Green Product) Compliant
Channel Type N-Channel Normal Level —
Manufacturer — Infineon Technologies
Product Type — N-Channel Power MOSFET
Technology — OptiMOS 5
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (ID,pulse) — 161 A
Gate-Source Voltage (VGS) max — +/-20 V
RDS(on) max at VGS=10 V — 3.0 mOhm
RDS(on) max at VGS=7 V — [DATA_NEEDED: RDS(on) at VGS=7V]
Power Dissipation (Ta=25C, 1.5mm FR4) — 2.5 W
Power Dissipation (TC=25C) — 139 W
Operating Temperature Range (TJ) — -55C to +150C
Boson Bebas — Yes
Lead-Free — Yes
Gate Drive Logic — Standard 10V, compatible with 12V drive
Optimized Application — Synchronous Rectification

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