IPL60R105P7AUMA1 vs IPL60R085P7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R105P7AUMA1 disebabkan oleh Infineon dan IPL60R085P7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPL60R105P7AUMA1 IPL60R085P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS P7 —
Technology Superjunction (SJ) N-Channel Power MOSFET CoolMOS P7 superjunction (7th generation)
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-VSON-4 (4-pin SMD with exposed pad) PG-VSON-4 (VSON-4, source-down)
Jenis Pemasangan Surface Mount Surface Mount
Channel Type N-Channel —
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Boson Bebas Yes —
Lead-Free Yes —
Continuous Drain Current (ID, Tc=25°C) — 39 A
Continuous Drain Current (ID, Tc=100°C) — 24 A
Static Drain-Source On-Resistance (RDS(on)) — 85 mΩ at VGS=10 V
Gate Threshold Voltage (VGS(th)) — 3.5 V
Maximum Power Dissipation (Ptot) — 154 W
Suhu Hubungan Operasi — -40 °C to +150 °C
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
ESD Robustness (HBM) — >2 kV (all pins)
Qualification — JEDEC industrial
Polarity — N-channel

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