IPN70R1K4P7SATMA1 vs IPN70R2K0P7SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN70R1K4P7SATMA1 disebabkan oleh Infineon dan IPN70R2K0P7SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 ✓ Aktif
Infineon
IPN70R2K0P7SATMA1 IPN70R2K0P7SATMA1 - 700V CoolMOS P7 MOSFET, 3A | Infineon

IPN70R2K0P7SATMA1 - 700V CoolMOS P7 MOSFET, 3A | Infineon

IPN70R2K0P7SATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPN70R1K4P7SATMA1 IPN70R2K0P7SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series CoolMOS P7 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (V(BR)DSS) 700 V —
Continuous Drain Current (ID) at TC 4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance (RDS(on)) 1.4 ohm class (per '1K4' suffix) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 3.5 V (typical)
Total Power Dissipation (PD) at TC 6.2 W —
Technology Superjunction (CoolMOS P7) Superjunction (SJ) N-Channel MOSFET
Kemasan PG-SOT223 (3-pin + tab, surface mount) PG-SOT223 (3 leads + tab)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (TJ) -55 °C to +150 °C
Configuration Single with built-in diode —
Kiraan Pin 3 (Gate, Drain, Source) —
DPAK Footprint Compatible Yes (drop-in alternative to DPAK per datasheet) —
Status RoHS Compliant Compliant (ROHS3)
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Part Family — CoolMOS P7
Polarity / Channel Type — N-Channel Enhancement Mode
Drain-Source Voltage (VDS) — 700 V
Continuous Drain Current (ID, Tc=25°C) — 3 A
Power Dissipation (PD, Tc=25°C) — 6 W
On-Resistance (RDS(on)) — 2.0 Ω (max, VGS=10 V)
Gate-Source Voltage (VGS max) — ±20 V
Integrated ESD Diode — Yes

Laporan Datasheet & Sumber

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