IPN70R1K4P7SATMA1 vs IPN70R2K0P7SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPN70R1K4P7SATMA1 sa pamamagitan ng Infineon at IPN70R2K0P7SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPN70R1K4P7SATMA1 | IPN70R2K0P7SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS P7 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V(BR)DSS) | 700 V | — |
| Continuous Drain Current (ID) at TC | 4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 1.4 ohm class (per '1K4' suffix) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 3.5 V (typical) |
| Total Power Dissipation (PD) at TC | 6.2 W | — |
| Technology | Superjunction (CoolMOS P7) | Superjunction (SJ) N-Channel MOSFET |
| Packhaging | PG-SOT223 (3-pin + tab, surface mount) | PG-SOT223 (3 leads + tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (TJ) | -55 °C to +150 °C |
| Configuration | Single with built-in diode | — |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| DPAK Footprint Compatible | Yes (drop-in alternative to DPAK per datasheet) | — |
| Tindminan RoHS | Compliant | Compliant (ROHS3) |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Part Family | — | CoolMOS P7 |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 3 A |
| Power Dissipation (PD, Tc=25°C) | — | 6 W |
| On-Resistance (RDS(on)) | — | 2.0 Ω (max, VGS=10 V) |
| Gate-Source Voltage (VGS max) | — | ±20 V |
| Integrated ESD Diode | — | Yes |